Power MOSFET, N Channel, 500 V, 20 A, 0.225 ohm, TO-247, Through Hole
Product Overview
The SIHG20N50C-E3 is a 500V N-channel Power MOSFET with high power dissipation and high peak current capability.
Halogen-free according to IEC 61249-2-21 definition
Low figure of merit Ron X Qg
100% Avalanche rated
dV/dt Ruggedness
Improved Trr/Qrr
Improved gate charge
Applications
Power Management
Product Information
Channel Type: N Channel
Transistor Polarity: N Channel
Drain Source Voltage Vds: 500V
Continuous Drain Current Id: 20A
Drain Source On State Resistance: 0.225ohm
On Resistance Rds(on): 0.225ohm
Transistor Case Style: TO-247
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Gate Source Threshold Voltage Max: 5V
Power Dissipation Pd: 292W
Power Dissipation: 292W
No. of Pins: 3Pins
Operating Temperature Max: 150°C
What's in the box
1 x Single Power Mosfet
