Power MOSFET, N Channel, 500 V, 14 A, 0.32 ohm, TO-247AC, Through Hole
Product Overview
The SIHG14N50D-GE3 is a D series N-channel enhancement-mode Power MOSFET suitable for consumer electronics, telecom power supply and battery charger applications.
Low area specific ON-resistance
Low input capacitance (CISS)
Reduced capacitive switching losses
High body diode ruggedness
Avalanche energy rated (UIS)
Simple gate drive circuitry
Low figure-of-merit (FOM) Ron x Qg
Fast switching
Halogen-free
Applications
Industrial, Power Management, Portable Devices, Consumer Electronics
Product Information
Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 14A
Drain Source Voltage Vds: 500V
Drain Source On State Resistance: 0.32ohm
On Resistance Rds(on): 0.32ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 3V
Power Dissipation Pd: 208W
Transistor Case Style: TO-247AC
Power Dissipation: 208W
No. of Pins: 3Pins
Operating Temperature Max: 150°C
Product Range: D
MSL: MSL 1 - Unlimited
What's in the box
1 x Single Power Mosfet
