Power MOSFET, P Channel, 8 V, 13.7 A, 0.0075 ohm, SOIC, Surface Mount
Product Overview
P-channel 1.8-V (G-S) TrenchFET® power MOSFET
100% Rg tested
Product Information
Channel Type: P Channel
Transistor Polarity: P Channel
Continuous Drain Current Id: 13.7A
Drain Source Voltage Vds: 8V
Drain Source On State Resistance: 0.0075ohm
On Resistance Rds(on): 0.0075ohm
Rds(on) Test Voltage: 4.5V
Transistor Mounting: Surface Mount
Gate Source Threshold Voltage Max: 450mV
Power Dissipation Pd: 6.5W
Transistor Case Style: SOIC
Power Dissipation: 6.5W
No. of Pins: 8Pins
Operating Temperature Max: 150°C
MSL: MSL 1 - Unlimited
What's in the box
1 x Single Power Mosfet
