Power MOSFET, HEXFET, P Channel, 50 V, 18 A, 0.093 ohm, TO-220AB, Through Hole
Product Overview
The IRF9Z30PBF is a P-channel enhancement-mode Power MOSFET designed for application which require the convenience of reverse polarity operation. This device design achieve very low ON-state resistance combined with high trans-conductance and extreme device ruggedness. It is intended for use in power stages where complementary symmetry with n-channel devices offer circuit simplification. It is also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection.
Fast switching
Compact plastic package
Low drive current
Ease of paralleling
Excellent temperature stability
Applications
Industrial, Power Management
Product Information
Channel Type: P Channel
Transistor Polarity: P Channel
Continuous Drain Current Id: 18A
Drain Source Voltage Vds: 50V
Drain Source On State Resistance: 0.093ohm
On Resistance Rds(on): 0.093ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 74W
Transistor Case Style: TO-220AB
Power Dissipation: 74W
No. of Pins: 3Pins
Operating Temperature Max: 150°C
What's in the box
1 x Single Power Mosfet
