Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole
Product Overview
The IRF740LCPBF is a N-channel enhancement-mode Power MOSFET with ultra-low gate charge. This new low charge Power device achieves significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge MOSFETs. This device improvements combined with the proven ruggedness and reliability that are characteristic of Power MOSFET offers the designer a new standard in power transistors for switching applications.
Repetitive avalanche rated
Reduced gate drive requirement
30V Enhanced VGS Rating
Reduced CISS, COSS, CRSS
Extremely high frequency operation
Applications
Industrial, Power Management
Product Information
Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 10A
Drain Source Voltage Vds: 400V
Drain Source On State Resistance: 0.55ohm
On Resistance Rds(on): 0.55ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 125W
Transistor Case Style: TO-220AB
Power Dissipation: 125W
No. of Pins: 3Pins
Operating Temperature Max: 150°C
What's in the box
1 x Single Power Mosfet
