Power MOSFET, N Channel, 100 V, 120 A, 0.0023 ohm, TO-263 (D2PAK), Surface Mount
Product Overview
The IPB027N10N3 G is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM.
Excellent switching performance
World's lowest RDS (ON)
Very low Qg and Qgd
Excellent gate charge x RDS (ON) product (FOM)
Environmentally friendly
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products
Halogen-free, Green device
MSL1 rated 2
Applications
Power Management, Audio, Motor Drive & Control, Industrial, Automotive
Product Information
Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 120A
Drain Source Voltage Vds: 100V
Drain Source On State Resistance: 0.0023ohm
On Resistance Rds(on): 0.0023ohm
Transistor Case Style: TO-263 (D2PAK)
Rds(on) Test Voltage: 10V
Transistor Mounting: Surface Mount
Gate Source Threshold Voltage Max: 2.7V
Power Dissipation Pd: 300W
Power Dissipation: 300W
No. of Pins: 3Pins
Operating Temperature Max: 175°C
MSL: MSL 1 - Unlimited
What's in the box
1 x Single Power Mosfet
