Power MOSFET, N Channel, 60 V, 50 A, 0.022 ohm, TO-220AB, Through Hole
Product Overview
The RFP50N06 is a 60V N-channel power MOSFET using MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The MOSFET is designed for applications such as switching regulators, switching converters, motor drivers and relay drivers. This transistor can be operated directly from integrated circuits. This product is general usage and suitable for many different applications.
Temperature compensating PSPICE® model
Peak current vs. pulse width curve
UIS Rated curve
175°C Rated junction temperature
Applications
Power Management, Motor Drive & Control
Product Information
Channel Type: N Channel
Transistor Polarity: N Channel
Drain Source Voltage Vds: 60V
Continuous Drain Current Id: 50A
Drain Source On State Resistance: 0.022ohm
On Resistance Rds(on): 0.022ohm
Transistor Case Style: TO-220AB
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 131W
Power Dissipation: 131W
No. of Pins: 3Pins
Operating Temperature Max: 175°C
What's in the box
1 x Single Power Mosfet
