Silicon Carbide MOSFET, Single, N Channel, 58 A, 1.2 kV, 0.04 ohm, TO-247
Product Information
MOSFET Module Configuration: Single
Channel Type: N Channel
Transistor Polarity: N Channel
Drain Source Voltage Vds: 1.2kV
Continuous Drain Current Id: 58A
On Resistance Rds(on): 0.04ohm
Drain Source On State Resistance: 0.04ohm
Transistor Case Style: TO-247
No. of Pins: 4Pins
Rds(on) Test Voltage: 20V
Gate Source Threshold Voltage Max: 3V
Power Dissipation Pd: 319W
Power Dissipation: 319W
Operating Temperature Max: 175°C
What's in the box
1 x Silicon Carbide MOSFET
