Power MOSFET, P Channel, 30 V, 20 A, 0.0038 ohm, SOIC, Surface Mount
Product Overview
The FDS6681Z is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
Extended VGSS range (-25V) for battery applications
HBM ESD protection level of ±3.8kV typical
High performance trench technology for extremely low RDS (on)
High power and current handling capability
Product Information
Channel Type: P Channel
Transistor Polarity: P Channel
Continuous Drain Current Id: 20A
Drain Source Voltage Vds: 30V
Drain Source On State Resistance: 0.0038ohm
On Resistance Rds(on): 0.0038ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Surface Mount
Gate Source Threshold Voltage Max: 1.8V
Power Dissipation Pd: 2.5W
Transistor Case Style: SOIC
Power Dissipation: 2.5W
No. of Pins: 8Pins
Operating Temperature Max: 150°C
What's in the box
1 x Single Power Mosfet
