Power MOSFET, N Channel, 100 V, 42 A, 0.0178 ohm, TO-252 (DPAK), Surface Mount
Product Overview
The FDD86102LZ is a N-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and switching loss. The G-S Zener has been added to enhance ESD voltage level.
Very low Qg and Qgd compared to competing Trench technologies
Fast switching speed
100% UIL tested
6kV typical HBM ESD protection level
Product Information
Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 42A
Drain Source Voltage Vds: 100V
Drain Source On State Resistance: 0.0178ohm
On Resistance Rds(on): 0.0178ohm
Transistor Case Style: TO-252 (DPAK)
Rds(on) Test Voltage: 10V
Transistor Mounting: Surface Mount
Gate Source Threshold Voltage Max: 1.5V
Power Dissipation Pd: 54W
Power Dissipation: 54W
No. of Pins: 3Pins
Operating Temperature Max: 150°C
MSL: MSL 1 - Unlimited
What's in the box
1 x Single Power Mosfet
