Power MOSFET, P Channel, 16.5 V, 500 mA, 1.3 ohm, TO-92, Through Hole
Product Overview
This enhancement-mode (normally-off) transistor utilises a lateral MOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistor and with the high input impedance and negative temperature coefficient inherent in MOS devices.
Suitable for logic level interfaces, solid state relays, battery operated systems, photo voltaic drives, analogue switches etc.
Ultra-low threshold
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Freedom from secondary breakdown
Low input and output leakage
Product Information
Channel Type: P Channel
Transistor Polarity: P Channel
Continuous Drain Current Id: 500mA
Drain Source Voltage Vds: 16.5V
Drain Source On State Resistance: 1.3ohm
On Resistance Rds(on): 1.3ohm
Rds(on) Test Voltage: 5V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 700mV
Power Dissipation Pd: 1W
Transistor Case Style: TO-92
Power Dissipation: 1W
No. of Pins: 3Pins
Operating Temperature Max: 150°C
What's in the box
1 x Single Power Mosfet
