Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-220, Through Hole
Product Overview
The SPP20N60C3 is a 650V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
Very low energy storage in output capacitance (Eoss) at 400V
Low gate charge (Qg)
High efficiency and power density
Outstanding performance
High reliability
Easy to use
Applications
Computers & Computer Peripherals, Communications & Networking, Consumer Electronics, Power Management
Product Information
Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 20.7A
Drain Source Voltage Vds: 650V
Drain Source On State Resistance: 0.19ohm
On Resistance Rds(on): 0.19ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 3V
Power Dissipation Pd: 208W
Transistor Case Style: TO-220
Power Dissipation: 208W
No. of Pins: 3Pins
Operating Temperature Max: 150°C
What's in the box
1 x Single Power Mosfet
