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Infineon (SPP17N80C3XKSA1) Power MOSFET, N Channel, 800 V, 17 A, 0.25 ohm

Infineon (SPP17N80C3XKSA1) Power MOSFET, N Channel, 800 V, 17 A, 0.25 ohm

TO-220AB, Through Hole
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R 105.00R 110.32
🚚 Ships in 9-11 work days

TO-220AB, Through Hole

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6-Month Limited Warranty.
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Product Information

SKU92204451
Stock StatusIn Stock
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Power MOSFET, N Channel, 800 V, 17 A, 0.25 ohm, TO-220, Through Hole

Product Overview
The SPP17N80C3 is a 800V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is designed for high DC bulk voltage and switching applications.
New revolutionary high voltage technology

Extreme dV/dt rated
High peak current capability
Qualified according to JEDEC for target applications
Improved transconductance
Periodic avalanche rated
Low specific ON-state resistance
Very low energy storage in output capacitance (Eoss)@400V
Field proven CoolMOS™ quality
High efficiency and power density
Outstanding performance
High reliability
Ease of use

Applications
Industrial, Communications & Networking, Consumer Electronics, Power Management

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 17A
Drain Source Voltage Vds: 800V
Drain Source On State Resistance: 0.25ohm
On Resistance Rds(on): 0.25ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 3V
Power Dissipation Pd: 227W
Transistor Case Style: TO-220
Power Dissipation: 227W
No. of Pins: 3Pins
Operating Temperature Max: 150°C

What's in the box
1 x Single Power Mosfet

Power MOSFET, N Channel, 800 V, 17 A, 0.25 ohm, TO-220, Through Hole

Product Overview
The SPP17N80C3 is a 800V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is designed for high DC bulk voltage and switching applications.
New revolutionary high voltage technology

Extreme dV/dt rated
High peak current capability
Qualified according to JEDEC for target applications
Improved transconductance
Periodic avalanche rated
Low specific ON-state resistance
Very low energy storage in output capacitance (Eoss)@400V
Field proven CoolMOS™ quality
High efficiency and power density
Outstanding performance
High reliability
Ease of use

Applications
Industrial, Communications & Networking, Consumer Electronics, Power Management

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 17A
Drain Source Voltage Vds: 800V
Drain Source On State Resistance: 0.25ohm
On Resistance Rds(on): 0.25ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 3V
Power Dissipation Pd: 227W
Transistor Case Style: TO-220
Power Dissipation: 227W
No. of Pins: 3Pins
Operating Temperature Max: 150°C

What's in the box
1 x Single Power Mosfet

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