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Infineon (SPA08N80C3XKSA1) Power MOSFET, N Channel, 800 V, 8 A, 0.65 ohm

Infineon (SPA08N80C3XKSA1) Power MOSFET, N Channel, 800 V, 8 A, 0.65 ohm

TO-220FP, Through Hole
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TO-220FP, Through Hole

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6-Month Limited Warranty.
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Product Information

SKU92206253
Stock StatusIn Stock
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Power MOSFET, N Channel, 800 V, 8 A, 0.65 ohm, TO-220FP, Through Hole

Product Overview
The SPA08N80C3 is a 800V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is suitable for solar, PC Power and adapter applications.

New revolutionary high voltage technology
Extreme dV/dt rated
Periodic avalanche rated
Qualified according to JEDEC for target applications
Ultra low effective capacitance
Fully isolated package
Improved transconductance
Low specific ON-state resistance
Field proven CoolMOS™ quality
Very low energy storage in output capacitance (Eoss)@400V
High efficiency and power density
Outstanding performance
High reliability
Ease of use

Applications
Industrial, Power Management, Alternative Energy, Consumer Electronics

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 8A
Drain Source Voltage Vds: 800V
Drain Source On State Resistance: 0.65ohm
On Resistance Rds(on): 0.65ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 3V
Power Dissipation Pd: 40W
Transistor Case Style: TO-220FP
Power Dissipation: 40W
No. of Pins: 3Pins
Operating Temperature Max: 150°C

What's in the box
1 x Power MOSFET

Power MOSFET, N Channel, 800 V, 8 A, 0.65 ohm, TO-220FP, Through Hole

Product Overview
The SPA08N80C3 is a 800V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is suitable for solar, PC Power and adapter applications.

New revolutionary high voltage technology
Extreme dV/dt rated
Periodic avalanche rated
Qualified according to JEDEC for target applications
Ultra low effective capacitance
Fully isolated package
Improved transconductance
Low specific ON-state resistance
Field proven CoolMOS™ quality
Very low energy storage in output capacitance (Eoss)@400V
High efficiency and power density
Outstanding performance
High reliability
Ease of use

Applications
Industrial, Power Management, Alternative Energy, Consumer Electronics

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 8A
Drain Source Voltage Vds: 800V
Drain Source On State Resistance: 0.65ohm
On Resistance Rds(on): 0.65ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 3V
Power Dissipation Pd: 40W
Transistor Case Style: TO-220FP
Power Dissipation: 40W
No. of Pins: 3Pins
Operating Temperature Max: 150°C

What's in the box
1 x Power MOSFET

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