Power MOSFET, N Channel, 55 V, 27 A, 0.035 ohm, TO-220AB, Through Hole
Product Overview
The IRLZ34NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Dynamic dv/dt rating
Fully avalanche rated
Logic-level gate drive
Advanced process technology
Applications
Power Management
Product Information
Channel Type: N Channel
Transistor Polarity: N Channel
Drain Source Voltage Vds: 55V
Continuous Drain Current Id: 27A
Drain Source On State Resistance: 0.035ohm
On Resistance Rds(on): 0.035ohm
Transistor Case Style: TO-220AB
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Gate Source Threshold Voltage Max: 2V
Power Dissipation Pd: 56W
Power Dissipation: 56W
No. of Pins: 3Pins
Operating Temperature Max: 175°C
What's in the box
1 x Single Power Mosfet
