Power MOSFET, N Channel, 55 V, 41 A, 0.0175 ohm, TO-220AB, Through Hole
Product Overview
The IRFZ44NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Dynamic dv/dt rating
Fully avalanche rated
Advanced process technology
Applications
Power Management
Product Information
Channel Type: N Channel
Transistor Polarity: N Channel
Drain Source Voltage Vds: 55V
Continuous Drain Current Id: 41A
Drain Source On State Resistance: 0.0175ohm
On Resistance Rds(on): 0.0175ohm
Transistor Case Style: TO-220AB
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 94W
Power Dissipation: 94W
No. of Pins: 3Pins
Operating Temperature Max: 175°C
Product Range: HEXFET Series
What's in the box
1 x Single Power Mosfet
