Power MOSFET, P Channel, 150 V, 13 A, 0.295 ohm, TO-252AA, Surface Mount
Product Overview
The IRFR6215TRPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
Advanced process technology
Fast switching
Fully avalanche rating
Low static drain-to-source ON-resistance
Dynamic dV/dt rating
Applications
Automotive, Power Management
Product Information
Channel Type: P Channel
Transistor Polarity: P Channel
Continuous Drain Current Id: 13A
Drain Source Voltage Vds: 150V
Drain Source On State Resistance: 0.295ohm
On Resistance Rds(on): 0.295ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Surface Mount
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 110W
Transistor Case Style: TO-252AA
Power Dissipation: 110W
No. of Pins: 3Pins
Operating Temperature Max: 175°C
MSL: MSL 1 - Unlimited
What's in the box
1 x Single Power Mosfet
