Power MOSFET, N Channel, 200 V, 50 A, 0.04 ohm, TO-247AC, Through Hole
Product Overview
The IRFP260MPBF is a HEXFET® fifth generation N-channel Power MOSFET utilize advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation.
Advanced process technology
Dynamic dV/dt rating
Fully avalanche rating
Ease of paralleling
Simple drive requirements
Low static drain-to-source ON-resistance
Applications
Commercial, Industrial, Power Management
Product Information
Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 50A
Drain Source Voltage Vds: 200V
Drain Source On State Resistance: 0.04ohm
On Resistance Rds(on): 0.04ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 300W
Transistor Case Style: TO-247AC
Power Dissipation: 300W
No. of Pins: 3Pins
Operating Temperature Max: 175°C
What's in the box
1 x Single Power Mosfet
