Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm, TO-247AC, Through Hole
Product Overview
The IRFP250NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
Drain to source voltage (Vds) of 200V
Gate to source voltage of ±20V
On resistance Rds(on) of 75mohm at Vgs 10V
Power dissipation Pd of 214W at 25°C
Continuous drain current Id of 30A at Vgs 10V and 25°C
Operating junction temperature range from -55°C to 175°C
Product Information
Channel Type: N Channel
Transistor Polarity: N Channel
Drain Source Voltage Vds: 200V
Continuous Drain Current Id: 30A
Drain Source On State Resistance: 0.075ohm
On Resistance Rds(on): 0.075ohm
Transistor Case Style: TO-247AC
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 214W
Power Dissipation: 214W
No. of Pins: 3Pins
Operating Temperature Max: 175°C
What's in the box
1 x Single Power Mosfet
