Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm, TO-247AC, Through Hole
Product Overview
Single N-channel HEXFET® power MOSFET
Advanced process technology
Fast switching
Fully avalanche rated
Dynamic dv/dt rating
Ease of paralleling
Simple drive requirements
Planar cell structure for wide SOA
Product qualification according to JEDEC standard
Targeted for high power density
Product Information
Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 30A
Drain Source Voltage Vds: 200V
Drain Source On State Resistance: 0.075ohm
On Resistance Rds(on): 0.075ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 214W
Transistor Case Style: TO-247AC
Power Dissipation: 214W
No. of Pins: 3Pins
Operating Temperature Max: 175°C
Product Range: HEXFET
What's in the box
1 x Single Power Mosfet
