Power MOSFET, N Channel, 150 V, 35 A, 0.032 ohm, TO-220AB, Through Hole
Product Overview
The IRFB4615PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and di/dt capability
Applications
Power Management, Industrial
Product Information
Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 35A
Drain Source Voltage Vds: 150V
Drain Source On State Resistance: 0.032ohm
On Resistance Rds(on): 0.032ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 3V
Power Dissipation Pd: 144W
Transistor Case Style: TO-220AB
Power Dissipation: 144W
No. of Pins: 3Pins
Operating Temperature Max: 175°C
What's in the box
1 x Single Power Mosfet
