Power MOSFET, N Channel, 200 V, 18 A, 0.1 ohm, TO-220AB, Through Hole
Product Overview
The IRFB4020PBF is a HEXFET single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device. It can deliver up to 300W per channel into 8R load in half-bridge configuration amplifier. It is suitable for battery operated drive, full-bridge and push-pull application.
Low RDS (ON) for improved efficiency
Low Qg and Qsw for better THD and improved efficiency
Low QRR for better THD and lower EMI
Applications
Audio, Consumer Electronics, Power Management
Product Information
Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 18A
Drain Source Voltage Vds: 200V
Drain Source On State Resistance: 0.1ohm
On Resistance Rds(on): 0.1ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 4.9V
Power Dissipation Pd: 100W
Transistor Case Style: TO-220AB
Power Dissipation: 100W
No. of Pins: 3Pins
Operating Temperature Max: 175°C
What's in the box
1 x Power MOSFET
