Power MOSFET, N Channel, 75 V, 120 A, 0.0058 ohm, TO-220AB, Through Hole
Product Overview
The IRFB3307ZPBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and di/dt capability
Applications
Power Management, Industrial
Product Information
Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 120A
Drain Source Voltage Vds: 75V
Drain Source On State Resistance: 0.0058ohm
On Resistance Rds(on): 0.0058ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 230W
Transistor Case Style: TO-220AB
Power Dissipation: 230W
No. of Pins: 3Pins
Operating Temperature Max: 175°C
What's in the box
1 x Single Power Mosfet
