Power MOSFET, N Channel, 75 V, 210 A, 0.0033 ohm, TO-220AB, Through Hole
Product Overview
The IRFB3077PBF is a 75V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
Improved gate, avalanche and dynamic dv/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Applications
Power Management
Product Information
Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 210A
Drain Source Voltage Vds: 75V
Drain Source On State Resistance: 0.0033ohm
On Resistance Rds(on): 0.0033ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 370W
Transistor Case Style: TO-220AB
Power Dissipation: 370W
No. of Pins: 3Pins
Operating Temperature Max: 175°C
What's in the box
1 x Single Power Mosfet
