Power MOSFET, P Channel, 100 V, 38 A, 0.06 ohm, TO-263 (D2PAK), Surface Mount
Product Overview
The IRF5210STRLPBF is a HEXFET® single P-channel Power MOSFET offers of this design is a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
Advanced process technology
Ultra-low ON-resistance
Fast switching
Repetitive avalanche allowed up to Tjmax
Applications
Automotive, Power Management
Product Information
Channel Type: P Channel
Transistor Polarity: P Channel
Continuous Drain Current Id: 38A
Drain Source Voltage Vds: 100V
Drain Source On State Resistance: 0.06ohm
On Resistance Rds(on): 0.06ohm
Transistor Case Style: TO-263 (D2PAK)
Rds(on) Test Voltage: 10V
Transistor Mounting: Surface Mount
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 3.8W
Power Dissipation: 3.8W
No. of Pins: 3Pins
Operating Temperature Max: 150°C
What's in the box
1 x Single Power Mosfet
