Power MOSFET, N Channel, 55 V, 110 A, 0.008 ohm, TO-220AB, Through Hole
Product Overview
The IRF3205PBF is a HEXFET® N-channel Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Advanced HEXFET® power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Dynamic dv/dt rating
Fully avalanche rated
Fast switching
±20V gate-source voltage
Product Information
Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 110A
Drain Source Voltage Vds: 55V
Drain Source On State Resistance: 0.008ohm
On Resistance Rds(on): 0.008ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 4V
Transistor Case Style: TO-220AB
Power Dissipation Pd: 200W
Power Dissipation: 200W
No. of Pins: 3Pins
Operating Temperature Max: 175°C
What's in the box
1 x Single Power Mosfet
