Power MOSFET, N Channel, 75 V, 100 A, 0.0078 ohm, TO-263 (D2PAK), Surface Mount
Product Overview
The IRF1407STRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
Advanced process technology
Dynamic dV/dt rating
Repetitive avalanche allowed up to Tjmax
Applications
Power Management
Product Information
Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 100A
Drain Source Voltage Vds: 75V
Drain Source On State Resistance: 0.0078ohm
On Resistance Rds(on): 0.0078ohm
Transistor Case Style: TO-263 (D2PAK)
Rds(on) Test Voltage: 10V
Transistor Mounting: Surface Mount
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 3.8W
Power Dissipation: 3.8W
No. of Pins: 3Pins
Operating Temperature Max: 175°C
MSL: MSL 1 - Unlimited
What's in the box
1 x Single Power Mosfet
