Power MOSFET, N Channel, 40 V, 195 A, 0.001 ohm, TO-220AB, Through Hole
Product Overview
The AUIRFB8409 is a 40V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.
Advanced process technology
New ultra low on-resistance
Repetitive avalanche allowed up to Tjmax
Automotive qualified
175°C Operating temperature
Applications
Automotive
Product Information
Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 195A
Drain Source Voltage Vds: 40V
Drain Source On State Resistance: 0.001ohm
On Resistance Rds(on): 0.001ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 3.9V
Power Dissipation Pd: 375W
Transistor Case Style: TO-220AB
Power Dissipation: 375W
No. of Pins: 3Pins
Operating Temperature Max: 175°C
Qualification: AEC-Q101
Automotive Qualification Standard: AEC-Q101
What's in the box
1 x Single Power Mosfet
